電子・光・磁性材料(電子光学)分野の英文校正サンプル

エナゴは、電子光学分野でも多くの論文を校正し、高い評価をいただいてきました。固体物理学と化学、電子工学と化学工学、および材料科学の基本原理などが複合的に関係する電子光学のほか、材料科学、半導体(セミコンダクター)などの幅広い知識を有する校正者が、専門的な見識を踏まえた校閲・校正を行います。こちらが電子光学論文の修正履歴付き校正サンプルです。アドバンス英文校正とノーマル英文校正の2つのサービスプランを比較いただき、各種サンプルをPDF形式でダウンロードすることもできます。

Figure 4, shows a CTSe thin film the X-ray powder diffraction (XRD) pattern of a thin CTSe film obtained prepared by through sequential deposition of thin films of CuSe and SnSe thin films, with using a preparation routine like one plottedshown in Fig. 3 and with evaporated masses of Cu and Sn of 0.01 and 0.07 g, respectively. The Figure 4 also showed shows  1 the XRD patterns for films of CuSe and SnSe films . Thesey are XRD patterns were compared with the CTSe diffractogrammy in order to get identify the reflections corresponding to secondary phases in the thin CTSe films with a greater degree of accuracy the reflections corresponding to secondary phases in the thin CTSe films.

Cu2SnSe3 thin films were grown with using a method based on sequential evaporation of thin films of CuSe, and SnSe thin films in a two two-stage process. Characterization done performed by XRD gave evidence of theproved the formation of a compound formation containing predominantly the Cu2SnSe3 phase;, however, the sequence with in which the binary precursors are evaporated and the preparation parameters, more significantly affects the phase formation as well as the structural, optical, and electricaltransportation properties 2 of the thin CTSe films. Moreover oOptical characterization performed byusing spectral transmittance measurements revealed that the CTSe films have low transmittance and also poor crystallographic quality, probably associated to structural and native defects, indicating that further studies must be done performed to improve CTSe films properteisproperties. Furthermore,  3 The the results revealed demonstrated that characterize of the Cu2SnSe3 films is could be potentially used for a done to get p-type conductivity semiconductor and with an energy band gap (Eg) of approximatelysomewhat 1.6 eV also.

Temperature-dependent Conductivity conductivity measurements on temperature dependence revealed that the  4 conductivitiesy of the CTSe films were is predominantly affected with by the transport of free carriers transport in states of the valence band. In high temperatures ranges (T > 550 K), the increase of σ could be attributed to an the increase of in the carrier densityies coming originating from deep acceptor impurities, whereas the change of σ observed in the low temperatures range (T < 350 K) can be attributed to a changes of in the carrier density of carrier coming originating from shallow acceptor impurities associated to with secondary phases.

Explanations

Figure 4, shows a CTSe thin film the XRD pattern of a thin CTSe film obtained by through sequential deposition of thin films of CuSe and SnSe, with using a preparation routine like as one that plotted in Fig. 3 and with evaporated masses of Cu and Sn of 0.01 and 0.07 g, respectively. The Figure 4 also showed shows  1the XRD patterns for films of CuSe and SnSe films . Thesey are were compared with the CTSe diffractogrammy in order to get obtain with a greater degree of accuracy the reflections corresponding to secondary phases in the thin CTSe films with a greater degree of accuracy.

Cu2SnSe3 thin films were grown with using a method based on sequential evaporation of thin films of CuSe, and SnSe in a two two-stage process. Characterization done performed by XRD gave evidence of theproved the formation of a compound formation containing predominantly the Cu2SnSe3 phase;, however, the sequence with in which the binary precursors are evaporated and the preparation parameters, more significantly affects the phase as well as the structural, optical, and electricaltransportation properties 2 of the thin CTSe films. Moreover oOptical characterization performed by spectral transmittance measurements revealed that the CTSe films have low transmittance and also poor crystallographic quality, probably associated to structural and native defects, indicating that further studies must be done to improve CTSe films properteisproperties. Furthermore,  3The the results revealed that characterize of the Cu2SnSe3 films is could be characterized done to get obtain p-type conductivity and with an energy band gap (Eg) of aroundsomewhat 1.6 eV also.

Temperature-dependent Conductivity conductivity measurements on temperature dependence revealed that the conductivitiesy of the CTSe films were is predominantly affected with by the free carrier transport in states of the valence band. In high temperatures ranges (T > 550 K), the increase of σ could be attributed to an the increase of in the carrier densityies coming originating from deep acceptor impurities, whereas the change of σ observed in the low temperatures range (T < 350 K) can be attributed to a changes of in the carrier density of carrier coming originating from shallow acceptor impurities associated to with secondary phases.

Explanations

◂ サンプル一覧に戻る

アフターサービスをご利用したお客様の声

ジャーナルに受理・掲載された論文

Enago has helped hundreds of authors to get papers published. Below is a list of authors who have published their papers and who thank Enago in their paper for providing high-quality editing services.